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cy62148ev30 mobl ? 4-mbit (512 k 8) static ram cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document number: 38-05576 rev. *q revised april 9, 2014 4-mbit (512 k 8) static ram features very high speed: 45 ns ? wide voltage range: 2.20 v to 3.60 v temperature range: ? industrial: ?40 c to +85 c ? automotive-a: ?40 c to +85 c pin compatible with cy62148dv30 ultra low standby power ? typical standby current: 1 ? a ? maximum standby current: 7 ? a (industrial) ultra low active power ? typical active current: 2 ma at f = 1 mhz easy memory expansion with ce and oe features automatic power down when deselected complementary metal oxide semiconductor (cmos) for optimum speed and power available in pb-free 36-ball very fine-pitch ball grid array (vfbga), 32-pin thin small outline package (tsop) ii, and 32-pin small outline int egrated circuit (soic) [1] packages functional description the cy62148ev30 is a high performance cmos static ram organized as 512 k words by 8 bits. this device features advanced circuit design to provide ultra low active current. this is ideal for providing more battery life? (mobl ? ) in portable applications such as cellular telephones. the device also has an automatic power down feature that significantly reduces power consumption. placing the device into standby mode reduces power consumption by more th an 99 percent when deselected (ce high). the eight input and output pins (i/o 0 through i/o 7 ) are placed in a high impedance state when the device is deselected (ce high), the outputs are disabled (oe high), or during a write operation (ce low and we low). to write to the device, take chip enable (ce ) and write enable (we ) inputs low. data on the eight i/o pins (i/o 0 through i/o 7 ) is then written into the location specified on the address pins (a 0 through a 18 ). to read from the device, take chip enable (ce ) and output enable (oe ) low while forcing write enable (we ) high. under these conditions, the contents of the memory location specified by the address pins appear on the i/o pins. a 0 io 0 io 7 io 1 io 2 io 3 io 4 io 5 io 6 a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8 a 9 sense amps power down ce we oe a 13 a 14 a 15 a 16 a 17 row decoder column decoder 512k x 8 array input buffer a 10 a 11 a 12 a 18 logic block diagram i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 note 1. soic package is available only in 55 ns speed bin.
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 2 of 19 contents pin configuration ............................................................. 3 product portfolio .............................................................. 3 maximum ratings ............................................................. 4 operating range ............................................................... 4 electrical characteristics ................................................. 4 capacitance ...................................................................... 5 thermal resistance .......................................................... 5 ac test loads and waveforms ....................................... 5 data retention characteristics ....................................... 6 data retention waveform ................................................ 6 switching characteristics ................................................ 7 switching waveforms ...................................................... 8 truth table ...................................................................... 10 ordering information ...................................................... 11 ordering code definitions ..... .................................... 11 package diagrams .......................................................... 12 acronyms ........................................................................ 15 document conventions ................................................. 15 units of measure ....................................................... 15 document history page ................................................. 16 sales, solutions, and legal information ...................... 19 worldwide sales and design s upport ......... .............. 19 products .................................................................... 19 psoc? solutions ...................................................... 19 cypress developer community ................................. 19 technical support ................. .................................... 19
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 3 of 19 pin configuration vfbga, soic and tsop ii pinouts are as follows. [2, 3] a 15 v cc a 13 a 12 a 5 nc we a 7 i/o 4 i/o 5 a 4 i/o 6 i/o 7 v ss a 11 a 10 a 1 v ss i/o 0 a 2 a 8 a 6 a 3 a 0 v cc i/o 1 i/o 2 i/o 3 a 17 a 18 a 16 ce oe a 9 a 14 d e b a c f g h nc 36-ball vfbga pinout top view 1 2 3 4 5 6 7 8 9 10 11 14 31 32 12 13 16 15 29 30 21 22 19 20 27 28 25 26 17 18 23 24 32-pin soic/tsop ii pinout top view a 17 a 16 a 15 a 14 a 13 a 12 a 11 a 10 a 9 a 8 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 v ss v cc a 18 we oe ce product portfolio product range v cc range (v) speed (ns) power dissipation operating i cc (ma) standby i sb2 (a) f = 1 mhz f = f max min typ [4] max typ [4] max typ [4] max typ [4] max cy62148ev30ll vfbga industrial 2.2 3.0 3.6 45 2 2.5 15 20 1 7 tsop ii industrial / automotive-a soic industrial 2.2 3.0 3.6 55 2 2.5 15 20 1 7 notes 2. soic package is available only in 55 ns speed bin. 3. nc pins are not connected on the die. 4. typical values are included for reference only and are not guaranteed or tested. typical values are measured at v cc = v cc(typ) , t a = 25 c.
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 4 of 19 maximum ratings exceeding maximum ratings may impair the useful life of the device. these user guidelines are not tested. storage temperature .. ............... ............... ?65 c to +150 c ambient temperature with power applied ............................................ 55 c to +125 c supply voltage to ground potential .......................................?0.3 v to v cc(max) + 0.3 v dc voltage applied to outputs in high z state [5, 6] ......................?0.3 v to v cc(max) + 0.3 v dc input voltage [5, 6] ...................?0.3 v to v cc(max) + 0.3 v output current into outputs (low) ............................. 20 ma static discharge voltage (mil-std-883, method 3015) ................................ > 2001 v latch up current ..................................................... > 200 ma operating range product range ambient temperature v cc [7] cy62148ev30 industrial / automotive-a ?40 c to +85 c 2.2 v to 3.6 v electrical characteristics over the operating range parameter description test conditions -45 (industrial / automotive-a) -55 [8] unit min typ [9] max min typ [9] max v oh output high voltage i oh = ?0.1 ma 2.0 ? ? 2.0 ? ? v i oh = ?1.0 ma, v cc > 2.70 v 2.4 ? ? 2.4 ? ? v v ol output low voltage i ol = 0.1 ma ? ? 0.4 ? ? 0.2 v i ol = 2.1 ma, v cc > 2.70 v ? ? 0.4 ? ? 0.4 v v ih input high voltage v cc = 2.2 v to 2.7 v 1.8 ? v cc + 0.3 v 1.8 ? v cc + 0.3 v v v cc = 2.7 v to 3.6 v 2.2 ? v cc + 0.3 v 2.2 ? v cc + 0.3 v v v il input low voltage v cc = 2.2 v to 2.7 v for vfbga and tsop ii packages ?0.3 ? 0.6 ? ? ? v for soic package ? ? ? ?0.3 ? 0.4 [10] v v cc = 2.7 v to 3.6 v for vfbga and tsop ii packages ?0.3 ? 0.8 ? ? ? v for soic package ? ? ? ?0.3 ? 0.6 [10] i ix input leakage current gnd < v i < v c ?1 ? +1 ?1 ? +1 ? a i oz output leakage current gnd < v o < v cc , output disabled ?1 ? +1 ?1 ? +1 ? a i cc v cc operating supply current f = f max = 1/t rc v cc = v cc(max) , i out = 0 ma, cmos levels ? 15 20 ? 15 20 ma f = 1 mhz ? 2 2.5 ? 2 2.5 i sb1 [11] automatic ce power down current ? cmos inputs ce > v cc ? 0.2 v, v in > v cc ? 0.2 v, v in < 0.2 v f = f max (address and data only), f = 0 (oe and we ), v cc = 3.60 v ?1 7 ?1 7 ? a i sb2 [11] automatic ce power down current ? cmos inputs ce > v cc ? 0.2 v, v in > v cc ? 0.2 v or v in < 0.2 v, f = 0, v cc = 3.60 v ?1 7 ?1 7 ? a notes 5. v il(min) = ?2.0 v for pulse durations less than 20 ns. 6. v ih(max) = v cc + 0.75 v for pulse durations less than 20 ns. 7. full device ac operation assumes a minimum of 100 ? s ramp time from 0 to v cc(min) and 200 ? s wait time after v cc stabilization. 8. soic package is available only in 55 ns speed bin. 9. typical values are included for reference only and are not guaranteed or tested. typical values are measured at v cc = v cc(typ) , t a = 25 c. 10. under dc conditions the device meets a v il of 0.8v (for v cc range of 2.7 v to 3.6 v) and 0.6 v (for v cc range of 2.2 v to 2.7 v). however, in dynamic conditions input low voltage applied to the device must not be higher than 0.6v and 0.4v for the above ranges. this is applicable to soic package only. 11. chip enable (ce ) must be high at cmos level to meet the i sb1 / i sb2 / i ccdr spec. other inputs can be left floating.
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 5 of 19 capacitance parameter [12] description test conditions max unit c in input capacitance t a = 25 c, f = 1 mhz, v cc = v cc(typ) 10 pf c out output capacitance 10 pf thermal resistance parameter [12] description test conditions 36-ball vfb- ga package 32-pin tsop ii package 32-pin soic package unit ? ja thermal resistance (junction to ambient) still air, soldered on a 3 4.5 inch, two-layer printed circuit board 72 75.13 55 ? c/w ? jc thermal resistance (junction to case) 8.86 8.95 22 ? c/w ac test loads and waveforms figure 1. ac test loads and waveforms v cc output r2 30 pf including jig and scope gnd 90% 10% 90% 10% rise time = 1 v/ns fall time = 1 v/ns output v equivalent to: thevenin equivalent all input pulses r th r1 v cc parameters 2.50 v 3.0 v unit r 1 16667 1103 ? r 2 15385 1554 ? r th 8000 645 ? v th 1.20 1.75 v note 12. tested initially and after any design or proces s changes that may affect these parameters.
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 6 of 19 data retention characteristics over the operating range parameter description conditions min typ [13] max unit v dr v cc for data retention 1.5 ? ? v i ccdr [14] data retention current v cc = 1.5 v, ce > v cc ? 0.2 v, v in > v cc ? 0.2 v or v in < 0.2 v industrial / automotive-a ?0.87 ? a t cdr [15] chip deselect to data retention time 0??ns t r [16] operation recovery time cy62148ev30ll-45 45 ? ? ns cy62148ev30ll-55 55 ? ? ns data retention waveform figure 2. data retention waveform v cc(min) v cc(min) t cdr v dr > 1.5 v data retention mode t r v cc ce notes 13. typical values are included for reference only and are not guaranteed or tested. typical values are measured at v cc = v cc(typ) , t a = 25 c. 14. chip enable (ce ) must be high at cmos level to meet the i sb1 / i sb2 / i ccdr spec. other inputs can be left floating. 15. tested initially and after any design or proces s changes that may affect these parameters. 16. full device ac operation requires linear v cc ramp from v dr to v cc(min) > 100 ? s or stable at v cc(min) > 100 ? s.
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 7 of 19 switching characteristics over the operating range parameter [17, 18] description -45 (industrial / automotive-a) -55 [19] unit min max min max read cycle t rc read cycle time 45 ? 55 ? ns t aa address to data valid ? 45 ? 55 ns t oha data hold from address change 10 ? 10 ? ns t ace ce low to data valid ? 45 ? 55 ns t doe oe low to data valid ? 22 ? 25 ns t lzoe oe low to low z [20] 5?5?ns t hzoe oe high to high z [20, 21] ?18?20ns t lzce ce low to low z [20] 10?10?ns t hzce ce high to high z [20, 21] ?18?20ns t pu ce low to power up 0 ? 0 ? ns t pd ce high to power down ? 45 ? 55 ns write cycle [22] t wc write cycle time 45 ? 55 ? ns t sce ce low to write end 35 ? 40 ? ns t aw address setup to write end 35 ? 40 ? ns t ha address hold from write end 0 ? 0 ? ns t sa address setup to write start 0 ? 0 ? ns t pwe we pulse width 35 ? 40 ? ns t sd data setup to write end 25 ? 25 ? ns t hd data hold from write end 0 ? 0 ? ns t hzwe we low to high z [20, 21] ?18?20ns t lzwe we high to low z [20] 10?10?ns notes 17. in an earlier revision of this device, under a specific a pplication condition, read and write operations were limited to swi tching of the chip enable signal as described in the application note an66311 . however, the issue has been fixed and in production now, and h ence, this application note is no longer applicable. it is avai lable for download on our website as it contains information on the date code of the parts, beyond which the fix has been in producti on. 18. test conditions for all parameters other than tri-state paramete rs assume signal transition time of 3 ns or less (1 v/ns), t iming reference levels of v cc(typ) /2, input pulse levels of 0 to v cc(typ) , and output loading of the specified i ol /i oh as shown in the figure 1 on page 5. 19. soic package is available only in 55 ns speed bin. 20. at any given temperature and voltage condition, t hzce is less than t lzce , t hzoe is less than t lzoe , and t hzwe is less than t lzwe for any given device. 21. t hzoe , t hzce , and t hzwe transitions are measured when the output enter a high impedance state. 22. the internal write time of the memory is defined by the overlap of we , ce = v il . all signals must be active to initiate a write and any of these signals can terminate a write by going inactive. the data input setup and hold timing must be referenced to the edge of the signal that terminates th e write.
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 8 of 19 switching waveforms figure 3. read cycle no. 1 (address transition controlled) [23, 24] figure 4. read cycle no. 2 (oe controlled) [24, 25] figure 5. write cycle no. 1 (we controlled, oe high during write) [26, 27] previous data valid data valid rc t aa t oha t rc address data out 50% 50% data valid t rc t ace t doe t lzoe t lzce t pu high impedance t hzoe t hzce t pd impedance i cc i sb high address ce data out v cc supply current oe data valid t hd t sd t pwe t sa t ha t aw t sce t wc t hzoe address ce we data i/o oe note 28 notes 23. device is continuously selected. oe , ce = v il . 24. we is high for read cycles. 25. address valid before or similar to ce transition low. 26. data i/o is high impedance if oe = v ih . 27. if ce goes high simultaneously with we high, the output remains in high impedance state. 28. during this period, the i/os are in output state. do not apply input signals.
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 9 of 19 figure 6. write cycle no. 2 (ce controlled) [29, 30] figure 7. write cycle no. 3 (we controlled, oe low) [30] switching waveforms (continued) t wc data valid t aw t sa t pwe t ha t hd t sd t sce address ce data i/o we data valid t hd t sd t lzwe t pwe t sa t ha t aw t sce t wc t hzwe address ce we data i/o note 31 notes 29. data i/o is high impedance if oe = v ih . 30. if ce goes high simultaneously with we high, the output remains in high impedance state. 31. during this period, the i/os are in output state. do not apply input signals.
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 10 of 19 truth table ce [32] we oe inputs/outputs mode power h x x high z deselect/power down standby (i sb ) l h l data out read active (i cc ) l h h high z output disabled active (i cc ) l l x data in write active (i cc ) note 32. chip enable must be at cmos levels (not floating). in termediate voltage levels on this pin is not permitted.
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 11 of 19 ordering code definitions ordering information speed (ns) ordering code package diagram package type operating range 45 CY62148EV30LL-45BVI 51-85149 36-ball vfbga industrial cy62148ev30ll-45bvxi 51-85149 36-ball vfbga (pb-free) cy62148ev30ll-45zsxi 51-85095 32-pin tsop ii (pb-free) cy62148ev30ll-45zsxa 51-85095 32-pin tsop ii (pb-free) automotive-a 55 cy62148ev30ll-55sxi 51-85081 32-pin soic (pb-free) industrial contact your local cypress sales repres entative for availability of these parts. temperature grade: x = i or a i = industrial; a = automotive-a pb-free package type: xx = bv or zs or s bv = 36-ball vfbga zs = 32-pin tsop ii s = 32-pin soic speed grade: xx = 45 ns or 55 ns ll = low power v30 = 3 v (typical) process technology: e = 90 nm bus width: 8 = 8 density: 4 = 4-mbit family code: 621 = mobl sram family company id: cy = cypress cy xx xx 621 4 8 e x ll x - v30
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 12 of 19 package diagrams figure 8. 36-ball vfbga (6 8 1. 0 mm) bv36a package outline, 51-85149 51-85149 *e
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 13 of 19 figure 9. 32-pin tsop ii (20.95 11.76 1.0 mm) zs32 package outline, 51-85095 package diagrams (continued) 51-85095 *b
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 14 of 19 figure 10. 32-pin soic (450 mils) s 32.45/sz32.45 package outline, 51-85081 package diagrams (continued) 51-85081 *e
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 15 of 19 acronyms document conventions units of measure acronym description bhe byte high enable ble byte low enable cmos complementary metal oxide semiconductor ce chip enable i/o input/output oe output enable sram static random access memory tsop thin small outline package vfbga very fine-pitch ball grid array we write enable symbol unit of measure c degree celsius a microampere ma milliampere ns nanosecond pf picofarad vvolt wwatt
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 16 of 19 document history page document title: cy62148ev30 mobl ? , 4-mbit (512 k 8) static ram document number: 38-05576 region ecn submission date orig. of change description of change ** 223225 see ecn aju new data sheet. *a 247373 see ecn syt changed status from advance information to preliminary. updated operating range (updated note 7 (changed v cc stabilization time from 100 ? s to 200 ? s)). updated data retention characteristics (changed maximum value of i ccdr parameter from 2.0 ? a to 2.5 ? a, changed minimum value of t r parameter from 100 ? s to t rc ns). updated switching characteristics (changed minimum value of t oha parameter from 6 ns to 10 ns for both 35 ns and 45 ns speed bin, changed maximum value of t doe parameter from 15 ns to 18 ns for 35 ns speed bin, changed maximum value of t hzoe , t hzwe parameters from 12 ns to 15 ns for 35 ns speed bin and 15 ns to 18 ns for 45 ns speed bin, changed minimum value of t sce from 25 ns to 30 ns for 35 ns speed bin and 40 ns to 35 ns for 45 ns speed bin, changed maximum value of t hzce parameter from 12 ns to 18 ns for 35 ns speed bin and 15 ns to 22 ns for 45 ns speed bin, changed minimum value of t sd parameter from 15 ns to 18 ns for 35 ns speed bin and 20 ns to 22 ns for 45 ns speed bin). updated ordering information (changed to include pb-free packages). *b 414807 see ecn zsd changed status from preliminary to final. changed the address of cypress semiconductor corporation on page #1 from ?3901 north first street? to ?198 champion court?. updated features (removed 35 ns speed bin). updated pin configuration (changed ball c3 from dnu to nc, removed the note ?dnu pins have to be left floating or tied to v ss to ensure proper application.? and its reference, added 32-pin soic pinout). updated electrical characteristics (removed ?l? version of cy62148ev30, changed maximum value of i cc parameter from 2 ma to 2.5 ma and typical value of i cc parameter from 1.5 ma to 2 ma at f = 1 mhz, changed typical value of i cc parameter from 12 ma to 15 ma at f = f max , changed typical value of i sb1 and i sb2 parameters from 0.7 ? a to 1 ? a and maximum value of i sb1 and i sb2 parameters from 2.5 ? a to 7 ? a). updated ac test loads and waveforms (changed the ac test load capacitance value from 50 pf to 30 pf). updated data retention characteristics (changed maximum value of i ccdr parameter from 2.5 ? a to 7 ? a, added typical value of i ccdr parameter). updated switching characteristics (changed minimum value of t lzoe parameter from 3 ns to 5 ns, changed minimum value of t lzce and t lzwe parameters from 6 ns to 10 ns, changed maximum value of t hzce parameter from 22 ns to 18 ns, changed minimum value of t pwe parameter from 30 ns to 35 ns, changed minimum value of t sd from 22 ns to 25 ns). updated ordering information (updated part numbers and replaced the package name column with package diagram). updated package diagrams (updated 36-pin vfbga from *b to *c, added 32-pin soic package diagram ( figure 10 )). *c 464503 see ecn nxr updated product portfolio (included automotive range). updated operating range (included automotive range). updated electrical characteristics (included automotive range). updated data retention characteristics (included automotive range). updated switching characteristics (included automotive range). updated ordering information (updated part numbers (included automotive parts and their related information)).
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 17 of 19 *d 833080 see ecn vkn updated electrical characteristics (added v il parameter for soic package, added note 10 and referred the same note in the maximum value of v il parameter for soic package). *e 890962 see ecn vkn updated features (added note 1 and referred the same note in 32-pin soic package). updated product portfolio (removed automotive range). updated operating range (removed automotive range). updated electrical characteristics (removed automotive range, added note 11 and referred the same note in i sb2 parameter). updated data retention characteristics (removed automotive range). updated switching characteristics (removed automotive range). updated switching characteristics (added values for all parameters for 55 ns industrial range). updated ordering information (updated part numbers). *f 987940 see ecn vkn updated electrical characteristics (changed maximum value of v ol parameter from 0.4 v to 0.2 v for industrial range at i ol = 0.1 ma, changed maximum value of v il parameter from 0.6 v to 0.4 v for industrial range, soic package at v cc = 2.2 v to 2.7 v, updated note 10 , updated note 11 (made the note applicable for both i sb2 and i ccdr parameters). *g 2548575 08/05/08 nxr updated features (included automotive-a range). updated product portfolio (included automotive-a range). updated operating range (included automotive-a range). updated electrical characteristics (included automotive-a range). updated data retention characteristics (included automotive-a range). updated switching characteristics (included automotive-a range). updated ordering information (updated part numbers (included automotive-a parts and their related information)). *h 2769239 09/25/09 vkn / aesa updated ordering information (updated part numbers). *i 2944332 06/04/2010 vkn updated truth table (added note 32 and referred the same note in ce column). updated package diagrams . *j 3007403 08/13/2010 aju added ordering code definitions . updated in new template. *k 3110202 12/14/2010 pras updated logic block diagram . updated ordering code definitions . *l 3302901 07/06/2011 rame updated functional description (removed the reference of an1064). updated ordering code definitions . updated package diagrams (51-85095). updated all the notes. updated in new template. *m 3363097 09/07/2011 aju updated data retention characteristics (corrected note cross-reference for i ccdr parameter (added note 14 and referred the same note in i ccdr parameter)). updated package diagrams (updated 36-ball vfbga and 32-pin soic package specs). *n 3546715 03/09/2012 tava updated electrical characteristics (updated note 10 (removed the line ?refer to an13470 for details?.)). *o 3733339 09/04/2012 jish minor text edits. sunset review. document history page (continued) document title: cy62148ev30 mobl ? , 4-mbit (512 k 8) static ram document number: 38-05576 region ecn submission date orig. of change description of change
cy62148ev30 mobl ? document number: 38-05576 rev. *q page 18 of 19 *p 4102967 08/23/2013 vini updated switching characteristics : added note 17 and referred the same note in ?parameter? column. updated package diagrams : spec 51-85081 ? changed revision from *d to *e. updated in new template. completing sunset review. *q 4307881 04/09/2014 nile updated switching characteristics : updated description of t pd parameter (replaced ?ce high to power up? with ?ce high to power down?). document history page (continued) document title: cy62148ev30 mobl ? , 4-mbit (512 k 8) static ram document number: 38-05576 region ecn submission date orig. of change description of change
document number: 38-05576 rev. *q revised april 9, 2014 page 19 of 19 mobl is a registered trademark, and more battery life is a tradem ark, of cypress semiconductor. all product and company names m entioned in this document are the trademarks of their respective holders. all products and company nam es mentioned in this document may be the trademarks of thei r respective holders. cy62148ev30 mobl ? ? cypress semiconductor corporation, 2004-2014. the information contained herein is subject to change without notice. cypress s emiconductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under patent or other rights. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement wi th cypress. furthermore, cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. any source code (software and/or firmware) is owned by cypress semiconductor corporation (cypress) and is protected by and subj ect to worldwide patent protection (united states and foreign), united states copyright laws and internatio nal treaty provisions. cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the cypress source code and derivative works for the sole purpose of creating custom software and or firmware in su pport of licensee product to be used only in conjunction with a cypress integrated circuit as specified in the applicable agreement. any reproduction, modification, translation, compilation, or repre sentation of this source code except as specified above is prohibited without the express written permission of cypress. disclaimer: cypress makes no warranty of any kind, express or implied, with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose. cypress reserves the right to make changes without further notice to t he materials described herein. cypress does not assume any liability arising out of the application or use of any product or circuit described herein. cypress does not authori ze its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress? prod uct in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. use may be limited by and subject to the applicable cypress software license agreement. sales, solutions, and legal information worldwide sales and design support cypress maintains a worldwide network of offices, solution center s, manufacturer?s representatives, and distributors. to find t he office closest to you, visit us at cypress locations . products automotive cypress.co m/go/automotive clocks & buffers cypress.com/go/clocks interface cypress. com/go/interface lighting & power control cypress.com/go/powerpsoc cypress.com/go/plc memory cypress.com/go/memory psoc cypress.com/go/psoc touch sensing cyp ress.com/go/touch usb controllers cypress.com/go/usb wireless/rf cypress.com/go/wireless psoc ? solutions psoc.cypress.com/solutions psoc 1 | psoc 3 | psoc 4 | psoc 5lp cypress developer community community | forums | blogs | video | training technical support cypress.com/go/support

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